3 Phase SiC Rod Heating Element For Glass furnace 1550℃
Silicon carbide rod heating element is a kind of non-metal rod or tube shape high temperature electric heating element. It is made of selected super purity green hexagonal silicon carbide as main material, which is made into blank and silicon crystal under high temperature of 2400ºC. In oxidizing atmosphere, its service temperature can reach 1450°C and continuous use life can reach 2000 hours.
Types: U, W, H, Gun, H, Single Spiral, Double Spiral, Dumbbell, Door like and other irregular shapes
Features of Silicon Carbide SiC Heating Elements
1. High strength and excellent shock resistance;
2. Heat source is free of noise and air pollution;
3. Anti-oxidization;
4. Anti-corrosion,
5. Long service life,
6. Little deformation,
7. Easy installation and maintenance.
8. Excellent specific rate of heat zone resistance and cold end resistance,
9. Avoiding over-temperature of cold ends to damage the furnace body.
10. Saving energy
Technical Index of Silicon Carbide SiC Heating Elements
| specific gravity |
2.6~2.8g/cm³ |
bend strength |
>300kg |
| hardness |
>9 MOH′S |
Tensile strength |
>150kg/cm³ |
| porosity rate |
<30% |
Radiancy |
0.85 |
The influence to the surface of Silicon Carbide SiC Heating Elements in different Operating Temperature and Surface Load
| atmosphere |
Furnace Temperature(°C) |
Surface Load(W/cm2) |
The influence on the Rod |
| Ammonia |
1290 |
3.8 |
The action on SiC produces methane and destroys the protection film of SiO2 |
| Carbon dioxide |
1450 |
3.1 |
Corrode SiC |
| Carbon monoxide |
1370 |
3.8 |
Absorb carbon powder and influence the protection film of SiO2 |
| Halogen |
704 |
3.8 |
Corrode SiC and destroy the protection film of SiO2 |
| Hydrogen |
1290 |
3.1 |
The action on SiC produces methane and destroys the protection film of SiO2 |
| Nitrogen |
1370 |
3.1 |
The action on SiC produces insulating layer of silicon nitride |
| Sodium |
1310 |
3.8 |
Corrode SiC |
| silicon dioxide |
1310 |
3.8 |
Corrode SiC |
| Oxygen |
1310 |
3.8 |
SiC oxidized |
| Water-vapor |
1090-1370 |
3.1-3.6 |
The action on SiC produces hydrate of silicon |
| Hydrocarbon |
1370 |
3.1 |
Absorb carbon powder resulted in Hot pollution
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